Resistive memory device and method of manufacturing the same and electronic device
AssigneeSamsung Electronics Co., Ltd.
InventorsKwanghee Kim, Heejae Lee, Oul Cho, Tae Hyung Kim, Eun Joo Jang
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Abstract
A resistive memory device including a first electrode and a second electrode facing each other and a variable resistance layer disposed between the first electrode and the second electrode, wherein the variable resistance layer includes cadmium-free quantum dots (Cd-free quantum dots) and at least a portion of the Cd-free quantum dots include a Cd-free quantum dot including a halide anion on a surface of the Cd-free quantum dot, a method of manufacturing the same and an electronic device.
Claims20
A resistive memory device, comprising:
- a first electrode and a second electrode facing each other, and
- a variable resistance layer disposed between the first electrode and the second electrode,
- wherein the variable resistance layer comprises Cd-free quantum dots,
- a first portion of the Cd-free quantum dots comprises a halide anion on the surface thereof, and
- a second portion of the Cd-free quantum dots does not comprise the halide anion on the surface thereof.
A method of manufacturing a resistive memory device, comprising:
- providing a first electrode,
- forming a variable resistance layer on the first electrode, and
- providing a second electrode on the variable resistance layer to manufacture the resistive memory device,
- wherein the variable resistance layer comprises Cd-free quantum dots, and
- a first portion of the Cd-free quantum dots comprises a halide anion on the surface thereof, and
- a second portion of the Cd-free quantum dots does not comprise the halide anion on the surface thereof.
A method of manufacturing a resistive memory device, comprising:
- providing a first electrode,
- forming an auxiliary layer on the first electrode,
- preparing a dispersion comprising Cd-free quantum dots,
- preparing a halide solution comprising a halide and a polar solvent,
- mixing the dispersion comprising the Cd-free quantum dots and the halide solution to convert the Cd-free quantum dots into Cd-free quantum dots comprising a halide anion on the surface thereof and Cd-free quantum dots not comprising the halide anion on the surface thereof,
- coating the dispersion comprising the Cd-free quantum dots comprising the halide anion on the surface thereof and the Cd-free quantum dots not comprising the halide anion on the surface thereof on the auxiliary layer to form a variable resistance layer, and
- providing a second electrode on the variable resistance layer to manufacture the resistive memory device.
Dependencies are inferred from the claim text.