Spin orbit torque (SOT) memory devices and methods of fabrication

A memory array structure, comprising:

• a first SOT electrode and a second SOT electrode, wherein the first and second SOT electrodes each have a length in a first direction and a width in a second direction, orthogonal to the first direction, and wherein the first and second SOT electrodes are separated from each other by an intervening space along the second direction;
• a first MTJ structure over a first portion of the length of the first SOT electrode;
• a second MTJ structure over a first portion of the length of the second SOT electrode, wherein the first portions of the lengths of the first and second SOT electrodes are substantially equal;
• a first dielectric material layer adjacent to a first sidewall portion of the first MTJ structure and adjacent to a first sidewall portion of the second MTJ structure, wherein the first dielectric material layer occupies the space and has a width substantially equal to the first portions of the lengths;
• and
• a second dielectric material layer adjacent to a second sidewall portion of both the first and second MTJ structures, wherein the second dielectric material layer is over a second portion of the length of the first SOT electrode, and over a second portion of the length of the second SOT electrode, and wherein the second dielectric material layer is adjacent to a sidewall of the first dielectric material layer.