US 11,444,233 B1 · Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

Abstract

A hysteretic magnetic Josephson junction (HMJJ) device is provided that comprises a non-magnetic spacer disposed between a first ferromagnetic layer and a second ferromagnetic layer, a first ferrimagnetic layer having a first side disposed on a side of the first ferromagnetic layer opposite the non-magnetic spacer, and a second ferrimagnetic layer having a first side disposed on a side of the second ferromagnetic layer opposite the non-magnetic spacer. The first ferrimagnetic layer and the second ferrimagnetic layer are formed from a composition that provides orthogonally magnetic responses relative to the magnetic responses of the first ferromagnetic layer and the second ferromagnetic layer. The HMJJ further comprises a first superconducting material layer having a first side disposed on a second side of the first ferromagnetic layer and a second superconducting material layer having a first side disposed on a second side of the second ferromagnetic layer.

Claims20

Dependent claims

A hysteretic magnetic Josephson junction (HMJJ) device comprising:

a non-magnetic spacer disposed between a first ferromagnetic layer and a second ferromagnetic layer;
a first ferrimagnetic layer having a first side disposed on a side of the first ferromagnetic layer opposite the non-magnetic spacer;
a second ferrimagnetic layer having a first side disposed on a side of the second ferromagnetic layer opposite the non-magnetic spacer, the first ferrimagnetic layer and the second ferrimagnetic layer being formed from a composition that provides orthogonally magnetic responses relative to the magnetic responses of the first ferromagnetic layer and the second ferromagnetic layer;
and
a first superconducting material layer having a first side disposed on a second side of the first ferromagnetic layer and a second superconducting material layer having a first side disposed on a second side of the second ferromagnetic layer, wherein a second side of the first superconducting layer and a second side of the second superconducting layer are configured as opposing galvanic contacts for the MJJ device.

2 more elements

A Josephson magnetic memory cell system comprising:

a hysteretic magnetic Josephson junction (HMJJ) configured to store a binary value and to convert superconducting pairs associated with the read current flowing through the HMJJ from a singlet-state to a triplet-state;
a write circuit magnetically coupled to the HMJJ and configured to write the binary value into the HMJJ in response to at least one write current;
and
a read circuit configured to determine the binary value stored in the HMJJ in response to application of a read current to the HMJJ, wherein the HMJJ comprises a first ferrimagnetic material layer having a fixed magnetization and a second ferrimagnetic material layer having a free magnetization corresponding to a bi-stable orientation, wherein the first and second ferrimagnetic material layers have a magnetic polarity that is substantially orthogonal with respect to a first ferromagnetic layer adjacent the first ferrimagnetic layer and a second ferromagnetic layer adjacent the second ferrimagnetic layer.

1 more element

Dependencies are inferred from the claim text.

Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

Life of this patent

Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

Life of this patent

Abstract

Claims20