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AssigneeAlanod GmbH & Co. KG
InventorStefan Ziegler
Estimating the term…
An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10−1 Ωmm2/m has been applied. The thickness (D9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).
An optoelectronic device, comprising, a leadframe for an electronic surface-mounted device, wherein the leadframe comprises a metallic material and wherein the electronic surface-mounted device lies and is mounted on a top side of the leadframe, and is electrically contacted to the leadframe by a wire, the leadframe comprises a metallic material having an aluminium carrier, on a surface of which a metallic joining layer not consisting of aluminium has been applied locally at a site of bonding to the wire;
Dependencies are inferred from the claim text.