Light-emitting semiconductor component

A light-emitting semiconductor component, comprising:

• a plurality of adjacently arranged emission regions that can be separately operated, individually and/or in groups;
• a conversion layer comprising a conversion material;
• an intermediate layer having a first refractive index;
• a radiation surface;
• wherein:
• the emission regions are part of a common semiconductor chip,
• the conversion layer is arranged downstream of the emission regions in the direction of radiation of the emission regions,
• the emission regions emit primary radiation of a first wavelength range into the conversion layer,
• the conversion layer converts at least a portion of the primary radiation into secondary radiation of a second wavelength range,
• mixed radiation is configured to be emitted from the light-emitting semiconductor component at the radiation surface,
• the mixed radiation comprises primary radiation and secondary radiation, and a probability that primary radiation travelling from the emission region to the radiation surface is converted into secondary radiation varies along the radiation surface by a maximum factor of 2,
• a concentration of the conversion material has in each case a local maximum in the vertical direction in a middle of the conversion layer where it overlaps with the respectively assigned emission region, the concentration of the conversion material in each case decreases along all directions starting from the respective local maximum and seen in cross-section through the conversion layer;
• and
• the concentration of the conversion material varies periodically along the main extension plane of the conversion layer, the periodicity of the variation in the concentration of the conversion material corresponds to a periodicity with which the emission regions are arranged along the main extension plane.