Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element

A production method for a nitride semiconductor light-emitting element, comprising:

• forming an n-type cladding layer comprising n-type AlGaN on a substrate;
• and
• forming a multiple quantum well layer in which a plurality (number N) of barrier layers comprising AlGaN having a second Al composition ratio more than the first Al composition ratio and a plurality (number N) of well layers having an Al composition ratio less than the second Al composition ratio are stacked alternatively in this order,
• wherein the forming the plurality of barrier layers of the multiple quantum well layer is performed while increasing an Al feed rate at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side, and
• wherein the increase rate has a value between 1.1% and 2.7%.