Back to results
US 11,444,216 B2Granted
Power photodiode structures, methods of making, and methods of use
AssigneeSLT Technologies, Inc.
InventorsDrew W. Cardwell, Mark P. D'Evelyn
Life of this patent
Estimating the term…
Abstract
According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
Claims26
A photodiode structure, comprising:
- a substrate having a first surface and a second surface, wherein
- the second surface is opposite to the first surface,
- the substrate is a single-crystalline group-III metal nitride, and
- the first surface of the substrate has a crystallographic orientation within 5 degrees of (0001) +c-plane, {10-10} m-plane, or a semipolar plane selected from one of {11-2±2}, {60-6±1}, {50-5±1}, {40-4±1}, {30-3±1}, {50-5±2}, {70-7±3}, {20-2±1}, {30-3±2}, {40-4±3}, {50-5±4}, {10-1±1}, {1 0 −1 ±2}, {1 0 −1 ±3}, or differs from (000-1) by between 2 degrees and 5 degrees;
- an n-type layer and a p-type layer that are disposed over the first surface of the substrate, wherein the n-type layer and the p-type layer each comprise AlxInyGa1-x-yN, where 0≤x, y, x+y≤1, and have a dopant concentration of at least 1×1016 cm−3;
- one or more absorber layers disposed between the n-type and the p-type layers, wherein the one or more absorber layers comprise AlxInyGa1-x-yN, where 0≤x, y, x+y≤1 and have a dislocation density below about 109 cm−2;
- a p-side electrical contact layer disposed over the p-type layer, wherein the p-side electrical contact layer has an average reflectance of at least 70% for at least one wavelength between 390 nanometers and 460 nanometers and a contact resistance below 3×10−3 Ωcm2;
- an n-side electrical contact layer disposed over the second surface of the substrate, wherein the n-side electrical contact layer has an average reflectance of at least 70% for at least one wavelength between 390 nanometers and 460 nanometers and a contact resistance below 1×10−3 Ωcm2;
- and
- a light receiving surface, wherein the light receiving surface is aligned to cause light, having at least one wavelength between 390 nanometers and 460 nanometers and incident on the light receiving surface at an angle, to be reflected at least once from the n-side electrical contact layer and from the p-side electrical contact layer, wherein the photodiode structure is characterized by a fill factor of at least 50%.
7 more elements
A photodiode structure, comprising:
- one or more absorber layers, wherein the one or more absorber layers comprise AlxInyGa1-x-yN, where 0≤x, y, x+y≤1;
- an n-type layer and a p-type layer, wherein
- the one or more absorber layers are disposed over the n-type layer,
- the p-type layer is disposed over the one or more absorber layers, and
- the n-type layer and the p-type layer each comprise AlxInyGa1-x-yN, where 0≤x, y, x+y≤1, and have a dopant concentration of at least 1×1016 cm−3;
- a carrier substrate having a first surface and a second surface, wherein
- the first surface of the carrier substrate is disposed over the p-type layer or under the n-type layer, and
- the carrier substrate is substantially transparent at wavelengths between 390 nanometers and 460 nanometers;
- a p-side electrical contact layer placed in electrical contact with the p-type layer, wherein the p-side electrical contact layer has a contact resistance below 3×10−3 Ωcm2;
- a p-side reflector layer disposed on one of the p-type layer and the second surface of the carrier substrate, the p-side reflector layer having an average reflectance of at least 70% for at least one wavelength between 390 nanometers and 460 nanometers;
- an n-side electrical contact layer placed in electrical contact with the n-type layer, wherein the n-side electrical contact layer has a contact resistance below 1×10−3 Ωcm2;
- an n-side reflector layer disposed over one of an n-side layer and the second surface of the carrier substrate, the n-side reflector layer having an average reflectance of at least 70% for at least one wavelength between 390 nanometers and 460 nanometers;
- and
- a light receiving surface, wherein the light receiving surface is aligned to cause light, having at least one wavelength between 390 nanometers and 460 nanometers and incident on the light receiving surface at an angle, to be reflected at least once from the n-side reflector layer and from the p-side reflector layer, wherein the photodiode structure is characterized by a fill factor of at least 50%.
11 more elements
Dependencies are inferred from the claim text.