Semiconductor structure with isolating feature and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Xuan Huang, Ching-Wei Tsai, Hou-Yu Chen, Kuan-Lun Cheng
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Abstract
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and a fin structure protruding from the substrate. The semiconductor structure also includes nanostructures formed over the fin structure and a gate structure surrounding the nanostructures. The semiconductor structure also includes a source/drain structure connected to the nanostructures and an isolating feature sandwiched between the fin structure and the source/drain structure.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a fin structure protruding from the substrate;
- nanostructures formed over the fin structure;
- inner spacers vertically sandwiched between the nanostructures;
- a gate structure surrounding the nanostructures;
- a source/drain structure connected to the nanostructures;
- and
- an isolating feature sandwiched between the fin structure and the source/drain structure,
- wherein a portion of the inner spacers is laterally sandwiched between the isolating feature and the gate structure.
A semiconductor structure, comprising:
- a substrate;
- a first fin structure protruding from the substrate;
- first nanostructures formed over the first fin structure;
- a gate structure wrapping around the first nanostructures at a channel region;
- an isolating feature covering a top surface of the first fin structure at a source/drain region;
- and
- a first source/drain structure formed over the isolating feature and connected to the first nanostructures,
- wherein the isolating feature is separated from the first nanostructures by the first source/drain structure.
A method for manufacturing a semiconductor structure, comprising:
- alternately stacking first semiconductor material layers and second semiconductor material layers over a substrate;
- patterning the first semiconductor material layers, the second semiconductor material layers, and the substrate to form a fin structure;
- forming spacers at opposite sides of the fin structure;
- forming a source/drain recess in a source/drain region of the fin structure between the spacers;
- forming an isolating feature in the source/drain recess between the spacers;
- forming a source/drain structure covering the isolating feature;
- removing the first semiconductor material layers to form nanostructures from the second semiconductor material layers in a channel region;
- and
- forming a gate structure wrapping around the nanostructures.
Dependencies are inferred from the claim text.