Method for fabricating semiconductor device with asymmetric strained source/drain structure

A method for forming a semiconductor structure, comprising:

• providing a substrate having an upper surface, a gate structure on the upper surface, spacers on sidewalls of the gate structure, a first region in the substrate, and a second region in the substrate;
• masking the second region and amorphorizing the first region, thereby forming an amorphous layer in the first region;
• depositing a stress film on the substrate, wherein the stress film conformally covers the gate structure, the spacers, the first region, and the second region;
• and
• recrystallizing the amorphous layer thereby forming a dislocation in the first region;
• forming a first trench in the first region;
• and
• forming a stress-inducing layer in the first trench.