Integrated channel diode

A method of forming an integrated circuit, comprising:

• forming a trench structure extending from a top surface of a semiconductor substrate into the substrate, the trench structure having a conductive plate and a dielectric liner between the semiconductor substrate and the conductive plate;
• forming a diode having a diode gate and a first p-type region abutting a first side of the dielectric liner, the diode gate located directly on a gate dielectric;
• forming a transistor having a transistor gate and a second p-type region abutting a second side of the dielectric liner;
• and
• forming an electrode layer overlying the diode gate, the transistor gate and the conductive plate, the diode gate electrically conductively coupled to the conductive plate by the metal layer, and the transistor gate of being insulated from the electrode layer.

A method of manufacturing a semiconductor device, comprising:

• forming first and second trench structures extending from a top surface of a semiconductor substrate into the semiconductor substrate, the first and second trench structures including respective first and second conductive plates;
• forming a split gate between the first and second trench structures over a gate dielectric layer, the split gate including a transistor gate and a diode gate;
• forming a first body region having a first conductivity type in the semiconductor substrate abutting the first trench structure between the first trench structure and the transistor gate, and a first source region having an opposite second conductivity type within the first body region;
• forming a second body region having the first conductivity type in the semiconductor substrate abutting the second trench structure between the second trench structure and the diode gate, and a second source region having the second conductivity type within the second body region;
• insulating the transistor gate from the first and second conductive plates;
• and
• forming a conductive connection between the diode gate and the first and second conductive plates.