Quantum dot devices

A quantum computing device, comprising:

• a quantum processing device, comprising:
• a base,
• a fin extending away from the base, wherein the fin includes a quantum well layer,
• an insulating material at least partially above the fin, wherein the insulating material includes a trench above the fin, wherein the insulating material extends down sides of the fin, and
• a gate, comprising a gate metal on the insulating material, the gate metal extending into the trench,
• wherein, in a direction perpendicular to a longitudinal axis of the fin and parallel to the base, a dimension of the fin is greater than a dimension of the trench;
• and
• a non-quantum processing device, coupled to the quantum processing device, to control voltages applied to the gate.

A method of manufacturing a quantum dot device, the method comprising:

• providing a fin extending away from a base, wherein the fin includes a quantum well layer;
• providing an insulating material at least partially above the tin, wherein the insulating material includes a trench above the fin, wherein insulating material extends down sides of the fin;
• and
• providing a gate metal on the insulating material and extending into the trench, wherein, in a direction perpendicular to a longitudinal axis of the fin and parallel to the base, a dimension of the fin is greater than a dimension of the trench.