US 11,444,187 B2Granted

Insulated gate bipolar transistor and diode

AssigneeRohm Co., Ltd.

InventorKohei Shinsho

Life of this patent

Estimating the term…

Loading patent…

Abstract

A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

Claims20

Dependent claims

A Reverse Conducting-Insulated Gate Bipolar Transistor (RC-IGBT) semiconductor device comprising:

a semiconductor layer having a first principal surface on one side and a second principal surface on the other side;
a gate structure formed in the first principal surface;
a gate pad covering the first principal surface at an interval in a first direction X from one side of the first principal surface as viewed in plane, and electrically connected to the gate structure;
a collector region of a first conductivity type formed in a surface layer portion of the second principal surface;
and
a plurality of cathode line regions of a second conductivity type that is formed in the surface layer portion of the second principal surface such as not to overlap the gate pad as viewed in plane, that extends in a band shape along the first direction X respectively as viewed in plane, and that is arranged at intervals in a second direction Y orthogonal to the first direction X as viewed in plane;
wherein the plurality of cathode line regions each has a first end portion located at a gate pad side and a second end portion located at an opposite side to the gate pad side as viewed in plane, and
regarding the plurality of cathode line regions, positions of the plurality of second end portions in the first direction X are aligned in the second direction Y as viewed in plane.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/200,209Filed 12 Mar 2021 · continuation
Priority: JP 2016-1343356 Jul 2016
Published: US 2021/0202726 A11 Jul 2021
Granted: 13 Sep 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs
H10D 12/411
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]: insulated-gate bipolar transistors [IGBT]
H10D 12/421
Insulated-gate bipolar transistors [IGBT]: on insulating layers or insulating substrates, e.g. thin-film IGBTs

Family

Application15/640,825Parent of this continuation · filed 3 Jul 2017
Application16/208,049Parent of this continuation · filed 3 Dec 2018
US 10,170,606 B2Parent of this continuation · filed 1 Jan 2019
Application16/849,705Parent of this continuation · filed 15 Apr 2020
US 10,658,499 B2Parent of this continuation · filed 19 May 2020
US 2021/0202726 A1Pre-grant publication · published 1 Jul 2021
US 10,978,580 B2Parent of this continuation
US 2018/0012982 A1Published application
US 2019/0109219 A1Published application
US 2020/0243673 A1Published application
US 11,444,187 B2This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key