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US 11,444,186 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorNao Nagata
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Abstract
A semiconductor device includes a semiconductor substrate, first and second trench electrodes formed on the semiconductor substrate, a floating layer of a first conductivity type formed around the first and second trench electrodes, a floating separation layer of a second conductivity type formed between the first and second trench electrodes and contacted with the floating layer of the first conductivity type and a floating layer control gate disposed on the floating separation layer of the second conductivity type.
Claims19
A semiconductor device comprising:
- a semiconductor substrate;
- first and second trench electrodes formed in the semiconductor substrate;
- a floating layer of a first conductivity type formed around the first and second trench electrodes;
- a floating separation layer of a second conductivity type formed between the first and second trench electrodes and contacted with the floating layer of the first conductivity type;
- and
- a floating layer control gate disposed above the floating separation layer of the second conductivity type.
3 more elements
Dependencies are inferred from the claim text.