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US 11,444,180 B2Granted
Method of forming uniform fin features
AssigneeNanya Technology Corporation
InventorYing-Cheng Chuang
Life of this patent
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Abstract
A method for forming a semiconductor structure includes: providing a structure including a substrate and a target layer disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of linear fin features within the central area in which the linear fin features are substantially parallel to each other and include edge imbalance portions; and removing the edge imbalance portions of the linear fin features to obtain linear uniform fin features.
Claims10
A method for forming a semiconductor structure comprising:
- providing a substrate and a target layer disposed on the substrate, and the target layer comprises a central area and a periphery area;
- forming a plurality of linear fin features within the central area, wherein the linear fin features are substantially parallel to each other and comprise edge imbalance portions, wherein each linear fin feature comprises a uniform portion, and each imbalance portion has a width lager than that of the uniform portion;
- and
- removing the edge imbalance portions of the linear fin features to obtain linear uniform fin features.
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Dependencies are inferred from the claim text.