Fabrication of long gate devices

A method, comprising:

• providing a workpiece, the workpiece comprising:
• a plurality of fin structures extending along a first direction over a first area and a second area of the workpiece,
• a plurality of first dummy gate stacks and a plurality of second dummy gate stacks disposed in the first area,
• a plurality of third dummy gate stack and a plurality of fourth dummy gate stacks disposed in the second area,
• a hard mask layer disposed over each of the plurality of first dummy gate stacks, the plurality of second dummy gate stacks, the plurality of third dummy gate stacks, and the plurality of fourth dummy gate stacks;
• depositing a photoresist (PR) layer over the workpiece to form a first PR layer portion over the first area and a second PR layer portion over the second area;
• and
• selectively forming a plurality of first openings through the second PR layer portion over the plurality of third dummy gate stack and a plurality of second openings through the second PR layer portion over the plurality of fourth dummy gate stacks, while the first PR layer portion remains intact.

A method, comprising:

• providing a workpiece comprising;
• a first area having a first dummy gate stack density, the first area including a plurality of first dummy gate stacks and a plurality of second dummy gate stacks, and
• a second area having second dummy gate stack density greater than the first dummy gate stack density, the second area including a plurality of third dummy gate stacks and a plurality of fourth dummy gate stacks;
• depositing a photoresist (PR) layer over the workpiece to form a first PR layer portion over the first area and a second PR layer portion over the second area;
• forming a plurality of openings through the second PR layer portion while the first PR layer portion remains intact;
• and
• after the forming of the plurality of openings, etching back the PR layer,
• wherein a gate length of each of the plurality of third dummy gate stacks is greater than a gate length of each of the plurality of first dummy gate stacks.