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US 11,444,172 B2Granted
Method for producing semiconductor device and semiconductor device
AssigneeMitsubishi Electric Corporation
InventorAtsushi Era
Life of this patent
Estimating the term…
Abstract
Examples of a method for producing a semiconductor device includes: forming a barrier layer having a composition of InAlN or InAlGaN over a channel layer; forming a transition layer having a composition of InGaN on the barrier layer while raising a growth temperature; and forming a cap layer of GaN on the transition layer.
Claims8
A semiconductor device, comprising:
- a substrate;
- a channel layer formed over the substrate;
- a barrier layer of InAlN or InAlGaN formed over the channel layer;
- a transition layer of InGaN formed on the barrier layer;
- a cap layer formed by GaN on the transition layer;
- wherein
- a composition of the transition layer is represented by InxGa1-xN, and
- the value of x is greater than 0 and smaller than 1 and the value of x decreases in a direction from the barrier layer to the cap layer.
5 more elements
Dependencies are inferred from the claim text.