Self-aligned gate endcap (SAGE) architecture having gate or contact plugs

An integrated circuit structure, comprising:

• a first trench contact structure over a first semiconductor fin;
• a second trench contact structure over a second semiconductor fin;
• a gate endcap isolation structure between the first and second semiconductor fins and laterally between and in contact with the first and second trench contact structures;
• a trench contact plug over the gate endcap isolation structure and laterally between the first trench contact structure and the second trench contact structure;
• and
• a crystalline metal oxide material laterally between and in contact with the trench contact plug and the first trench contact structure, and laterally between and in contact with the trench contact plug and the second trench contact structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a first gate structure over a first semiconductor fin;
• a second gate structure over a second semiconductor fin;
• a gate endcap isolation structure between the first and second semiconductor fins and laterally between and in contact with the first and second gate structures;
• a gate plug over the gate endcap isolation structure and laterally between the first gate structure and the second gate structure;
• and
• a crystalline metal oxide material laterally between and in contact with the gate plug and the first gate structure, and laterally between and in contact with the gate plug and the second gate structure.