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US 11,444,165 B2Granted
Asymmetric threshold voltages in semiconductor devices
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Alexander Reznicek, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi
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Abstract
Semiconductor devices and methods of forming the same include forming an inner spacer on a semiconductor fin. Two outer spacers are formed around the inner spacer, with one outer spacer being separated from the inner spacer by a gap. A dipole-forming layer is formed on the semiconductor fin in the gap. A gate stack is formed on the semiconductor fin, between the outer spacers.
Claims14
A method of forming a semiconductor device, comprising:
- forming an inner spacer on a semiconductor fin;
- forming two outer spacers around the inner spacer, with one outer spacer being separated from the inner spacer by a gap;
- forming a dipole-forming layer on the semiconductor fin in the gap;
- and
- forming a gate stack on the semiconductor fin, between the outer spacers.
2 more elements
A semiconductor device, comprising:
- a semiconductor channel;
- a dipole-forming layer on the semiconductor channel that covers less than the full semiconductor channel;
- and
- a gate stack formed over semiconductor channel, with a first portion of the gate stack being formed over the dipole-forming layer and a second portion of the gate stack having no dipole-forming layer under it.
1 more element
Dependencies are inferred from the claim text.