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AssigneeSumitomo Electric Industries, Ltd.
InventorsShinya Fujiwara, Tomoaki Miyoshi
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An InP substrate, being a group III-V compound semiconductor substrate, that includes, on a main surface thereof, 0.22 particles/cm2 that have a particle diameter of at least 0.19 μm or 20 particles/cm2 that have a particle diameter of 0.079 μm. An InP substrate with an epitaxial layer, being a group III-V compound semiconductor substrate with an epitaxial layer, includes: the InP substrate and an epitaxial layer arranged upon the main surface of the InP substrate; and, upon the main surface thereof when the thickness of the epitaxial layer is 0.3 μm, no more than 10 LPD that have a circle-equivalent diameter of at least 0.24 μm, per cm2, or no more than 30 LPD that have a circle-equivalent diameter of at least 0.136 μm, per cm2. As a result, a group III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown upon a main surface thereof and a group III-V compound semiconductor substrate with an epitaxial layer are provided.
A group III-V compound semiconductor substrate being an indium phosphide substrate, the group III-V compound semiconductor substrate comprising particles of greater than or equal to 0.19 μm in particle size at less than or equal to 0.22 particles/cm2 on a main surface.
A group III-V compound semiconductor substrate being an indium phosphide substrate, the group III-V compound semiconductor substrate comprising particles of greater than or equal to 0.079 μm in particle size at less than or equal to 20 particles/cm2 on a main surface.
A group III-V compound semiconductor substrate being a conductive gallium arsenide substrate, the group III-V compound semiconductor substrate comprising particles of greater than or equal to 0.079 μm in particle size at less than or equal to 1.0 particle/cm2 on a main surface.
Dependencies are inferred from the claim text.