Integrated circuit (IC) structure with body contact to well with multiple diode junctions

An integrated circuit (IC) structure, comprising:

• a first doped well within a substrate, the first doped well having a first doping type;
• a transistor structure on the first doped well;
• a first dopant extension region within the first doped well, the first dopant extension region having the first doping type in a higher concentration than an adjacent portion of the first doped well;
• a trench isolation (TI) adjacent a portion of the first doped well;
• a second doped well within the substrate, the second doped well having a second doping type opposite the first doping type, wherein the second doped well includes:
• a first portion beneath the first doped well, wherein a boundary between the first portion of the second doped well and the first doped well defines a first diode junction, and a boundary between the first portion of the second doped well and the substrate defines a second diode junction, and
• a second portion coupled to a body contact and having a bottom surface substantially coplanar with a bottom surface of the first portion, wherein the second portion includes a sidewall adjacent the first portion of the second doped well and adjacent the TI.

A method of forming an integrated circuit (IC) structure, the method comprising:

• forming a first doped well of a first doping type within a substrate
• forming a first dopant extension region within the first doped well, the first dopant extension region having the first doping type in a higher concentration than an adjacent portion of the first doped well;
• forming a trench isolation (TI) adjacent a sidewall of the first doped well;
• forming a second doped well of a second doping type within the substrate, wherein a vertical boundary between the first portion of the second doped well and the first doped well defines a first diode junction, and a vertical boundary between the first portion of the second doped well and the substrate defines a second diode junction;
• forming a transistor structure on the first doped well;
• and
• forming a body contact to a second portion of the second doped well.