Field effect transistors with wide bandgap materials

A system comprising:

• a chip including an electronic device comprising a semiconductor channel layer on a semiconductor buffer layer on a substrate, wherein the semiconductor buffer layer and a portion of the semiconductor channel layer are in a trench in a dielectric layer above the substrate, the semiconductor channel layer having a first portion and a second portion laterally adjacent to the first portion, the first portion comprising a first semiconductor, the second portion comprising a second semiconductor that has a bandgap greater than a bandgap of the first semiconductor;
• and
• a gate electrode on the semiconductor channel layer, wherein the first portion of the semiconductor channel layer comprises an undercut region extending laterally underneath the gate electrode, and wherein the second portion is in the undercut region.