Semiconductor device including an anode contact region having a varied doping concentration

A semiconductor device, comprising:

• an IGBT (insulated gate bipolar transistor) in an IGBT portion of a semiconductor body;
• and
• a diode in a diode portion of the semiconductor body,
• wherein the diode comprises:
• an anode region of a first conductivity type and confined by diode trenches along a first lateral direction, each of the diode trenches including a diode trench electrode and a diode trench dielectric;
• a first contact groove extending into the anode region along a vertical direction from a first surface of the semiconductor body;
• an anode contact region of the first conductivity type adjoining a bottom side of the first contact groove;
• and
• a cathode contact region of a second conductivity type adjoining a second surface of the semiconductor body opposite to the first surface,
• wherein the anode contact region has a first doping concentration at a first position below a center of a bottom side of the first contact groove, wherein the doping concentration of the anode contact region decreases by at least a factor of ten over a lateral distance starting from the first position to a second position along the first lateral direction.