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US 11,444,153 B2Granted
Method of forming stress memorization layer on backside of semiconductor substrate and semiconductor device thereof
AssigneeApplied Materials, Inc.
InventorsQintao Zhang, Wei Zou
Life of this patent
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Abstract
Embodiments herein are directed to methods and devices having a stress memorization layer along a side of a substrate. In some embodiments, a method may include providing a substrate having a first main side opposite a second main side, implanting the second main side of the substrate to form an amorphous implant area, forming a stress liner over the second main side of the substrate, and annealing the stress liner to form a stress memorization layer in the amorphous implant area.
Claims19
A method, comprising:
- providing a substrate having a first main side opposite a second main side;
- depositing a stack of layers atop the first main side of the substrate;
- implanting the second main side of the substrate to form an amorphous implant area;
- forming a stress liner over the second main side of the substrate;
- and
- annealing the stress liner to form a stress memorization layer in the amorphous implant area.
3 more elements
A method for forming a semiconductor device, comprising:
- depositing a stack of layers atop a first main side of a substrate;
- implanting a second main side of the substrate to form an amorphous implant area;
- forming a stress liner along the second main side of the substrate;
- annealing the stress liner to form a stress memorization layer in the amorphous implant area along the second main side of the substrate;
- and
- removing the stress liner from along the stress memorization layer and from along the second main side of the substrate.
3 more elements
A semiconductor device, comprising:
- a stack of layers formed atop a first main side of a substrate;
- and
- a stress memorization layer formed in a second main side of the substrate, wherein the second main side of the substrate is a backside of the substrate.
Dependencies are inferred from the claim text.