Back to results
US 11,444,150 B2Granted
Method and apparatus for a thin film dielectric stack
AssigneeNXP USA, Inc.
InventorsMarina Zelner, Andrew Vladimir Claude Cervin, Edward Provo Wallis Horne
Life of this patent
Estimating the term…
Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
Claims18
A thin film capacitor comprising:
- a silicon substrate having a silicon dioxide layer;
- an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric material;
- a first electrode layer on the adhesion layer;
- a dielectric layer on the first electrode layer;
- a second electrode layer on the dielectric layer;
- and
- connections for the first electrode layer, the second electrode layer, or both.
4 more elements
A thin film capacitor comprising:
- a silicon substrate with a silicon dioxide layer;
- an adhesion layer on the silicon dioxide layer of the silicon substrate, wherein the adhesion layer comprises a polar dielectric selected from a family of niobate, zirconate, titanate, and silicate or a mixture thereof, and wherein the adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx, wherein the adhesion layer is between 50 to 500 Angstroms thick;
- another adhesion layer on the adhesion layer, wherein the another adhesion layer comprises a thin film, and the another adhesion layer comprising one of Ti or TiOx;
- a first electrode layer on the another adhesion layer;
- a dielectric layer on the first electrode layer;
- a second electrode layer on the dielectric layer;
- and
- a connection for the first electrode layer, the second electrode layer, or both.
5 more elements
A thin film capacitor comprising:
- a silicon substrate with a silicon dioxide layer;
- a first adhesion layer on the silicon dioxide layer of the silicon substrate, wherein the first adhesion layer comprises a polar dielectric selected from a family of niobate, and silicate or a mixture thereof, wherein the first adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx, wherein the first adhesion layer is poly-crystalline, and wherein the first adhesion layer is between 50 to 500 Angstroms thick;
- a second adhesion layer on the first adhesion layer, wherein the second adhesion layer comprises a thin film, the second adhesion layer comprising one of Ti or TiOx;
- a first electrode layer on the second adhesion layer;
- a dielectric layer on the first electrode layer, wherein the dielectric layer comprises a first dielectric layer on the first electrode layer, and a second dielectric layer on the first dielectric layer;
- a second electrode layer on the dielectric layer;
- and
- a connection for the first electrode layer, the second electrode layer, or both.
5 more elements
A thin film capacitor comprising:
- a silicon substrate with a silicon dioxide layer;
- an adhesion layer on the silicon dioxide layer of the silicon substrate, wherein the adhesion layer comprises a polar dielectric selected from a family of niobate, zirconate, titanate, and silicate or a mixture thereof, wherein the adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx, wherein the adhesion layer is poly-crystalline, and wherein the adhesion layer is between 50 to 500 Angstroms thick;
- another adhesion layer on the adhesion layer, the another adhesion layer comprising one of Ti or TiOx, and the another adhesion layer comprising a thin film;
- a first electrode layer on the another adhesion layer;
- a first dielectric layer on the first electrode layer, wherein the first dielectric layer has a columnar-oriented grain structure;
- a group of second dielectric layers stacked on the first dielectric layer to obtain a dielectric stack, wherein each of the group of second dielectric layers has a randomly-oriented grain structure, wherein at least one of the group of second dielectric layers is formed from a different material from at least one other of the group of second dielectric layers;
- a second electrode layer on the group of second dielectric layers, wherein the dielectric stack extends between the first electrode layer and the second electrode layer;
- a connection for the first electrode layer, the second electrode layer, or both.
5 more elements
Dependencies are inferred from the claim text.