Hybrid memristor/field-effect transistor memory cell and its information encoding scheme

A method for programming a hybrid memory cell of a resistive random-access memory (ReRAM), the method comprising:

• applying a write voltage between a second terminal of a left resistance-switching device and a second terminal of a right resistance-switching device, wherein a first terminal of the left resistance-switching device is connected to a first terminal of the right resistance-switching device at an internal node;
• and
• removing the write voltage after a predetermined time;
• wherein the hybrid memory cell comprises the left resistance-switching device, the right resistance-switching device, and a transistor,
• wherein the second terminal of the left resistance-switching device is directly connected to a word line and the second terminal of the right resistance-switching device is directly connected to a bit line.

A method for determining a logic level of a hybrid memory cell of a resistive random-access memory (ReRAM), the method comprising:

• applying a read voltage between a second terminal of a left resistance-switching device and a second terminal of a right resistance-switching device, wherein a first terminal of the left resistance-switching device is connected to a first terminal of the right resistance-switching device at an internal node;
• applying a voltage bias at a gate of a transistor, wherein a drain of the transistor is connected to the internal node;
• and
• sensing voltage at the internal node via a source of the transistor;
• wherein the hybrid memory cell comprises the left resistance-switching device, the right resistance-switching device, and the transistor.