Selector transistor with metal replacement gate wordline
AssigneeIntegrated Silicon Solution, (Cayman) Inc.
InventorsDafna Beery, Peter Cuevas, Amitay Levi, Andrew J. Walker
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AssigneeIntegrated Silicon Solution, (Cayman) Inc.
InventorsDafna Beery, Peter Cuevas, Amitay Levi, Andrew J. Walker
Estimating the term…
A vertical transistor structure having a metal gate wordline. The vertical transistor structure can include an epitaxially grown semiconductor column surrounded by a thin gate dielectric layer. A gate structure can surround the semiconductor column and the gate dielectric layer. The device can include first and second dielectric layers and an electrically conductive metal layer located between the first and second dielectric layers. The electrically conductive metal of the gate structure can be tungsten (W). In addition, a thin layer of Ti or TiN can be formed between the metal gate layer and the first and second dielectric layers and the gate dielectric layer. The metal gate layer can be formed with or without the use of a sacrificial layer.
A method for manufacturing a memory array, the method comprising:
A method for manufacturing a vertical transistor structure, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.