Light emitting element, light emitting element manufacturing method, and display device including light emitting element
AssigneeSamsung Electronics Co., Ltd.
InventorsJinhee Kang, Jitsuo Ota
Life of this patent
Estimating the term…
Abstract
A light emitting element, a manufacturing method therefor, and a display device including the light emitting element are disclosed. Particularly, disclosed are a multi-tunnel junction light emitting element having two or more light emitting regions, which are horizontally separated from each other, and a manufacturing method therefor, and disclosed is a display device which includes the light emitting element so as to efficiently arrange pixels and independently control the light emitting regions.
Claims15
A light emitting element comprising:
- a first light emitting cell comprising a first light emitting layer and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN layer sequentially laminated on an upper portion of the first light emitting layer;
- a second light emitting cell comprising a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the second light emitting layer;
- an insulating layer provided on the first light emitting cell and the second light emitting cell so that the first light emitting cell and the second light emitting cell are electrically separated from each other;
- a reflective layer provided on at least a portion of the insulating layer;
- a passivation layer provided on at least a portion of the reflective layer;
- a common electrode configured to be electrically connected to the first light emitting cell and the second light emitting cell;
- a first pixel electrode configured to be electrically connected to the first light emitting cell;
- and
- a second pixel electrode configured to be electrically connected to the second light emitting cell,
- wherein a light emitting region of the first light emitting cell and a light emitting region of the second light emitting cell are horizontally separated from each other by the common electrode.
A display device comprising:
- a display panel comprising a light emitting element and a switching element;
- and
- a processor configured to control the display panel,
- wherein the light emitting element comprises:
- a first light emitting cell comprising a first light emitting layer and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN GaN layer sequentially laminated on an upper portion of the first light emitting layer;
- a second light emitting cell comprising a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the second light emitting layer;
- an insulating layer provided on the first light emitting cell and the second light emitting cell so that the first light emitting cell and the second light emitting cell are electrically separated from each other;
- a reflective layer provided on at least a portion of the insulating layer;
- a passivation layer provided on at least a portion of the reflective layer;
- a common electrode configured to be electrically connected to the first light emitting cell and the second light emitting cell;
- a first pixel electrode configured to be electrically connected to the first light emitting cell;
- and
- a second pixel electrode configured to be electrically connected to the second light emitting cell,
- wherein a light emitting region of the first light emitting cell and a light emitting region of the second light emitting cell are horizontally separated from each other by the common electrode.
A method for manufacturing a light emitting element, the method comprising:
- vapor-depositing a first light emitting layer, a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer on a substrate;
- forming a first light emitting cell including the first light emitting layer and the plurality of conductive semiconductor layers, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN layer sequentially laminated on an upper portion of the first light emitting layer;
- forming a second light emitting cell including the second light emitting layer and the plurality of conductive semiconductor layers and horizontally separated from the first light emitting cell;
- vapor-depositing an insulating layer on the first light emitting cell and the second light emitting cell so that the first light emitting cell is electrically separated from the second light emitting cell;
- vapor depositing a reflective layer provided on at least a portion of the insulating layer;
- vapor depositing a passivation layer provided on at least a portion of the reflective layer;
- forming a common electrode electrically connected to the first light emitting cell and the second light emitting cell in a region separated between the first light emitting cell and the second light emitting cell;
- forming a first pixel electrode electrically connected to the first light emitting cell;
- and
- forming a second pixel electrode electrically connected to the second light emitting cell.
Dependencies are inferred from the claim text.