Solid-state imaging device and electronic apparatus
AssigneeSony Group Corporation
InventorHirotoshi Nomura
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
Claims20
A light detection device, comprising:
- first, second, and third photoelectric conversion regions disposed in a substrate, wherein the second photoelectric conversion region is disposed adjacent to the first photoelectric conversion region the third photoelectric conversion region, and wherein the first, second, and third photoelectric conversion regions are disposed along a first direction;
- a first on-chip lens disposed above the first and second photoelectric conversion regions;
- a second on-chip lens disposed above the third photoelectric conversion region;
- a light shield, wherein at least a part of the light shield is disposed between the first photoelectric conversion region and the second photoelectric conversion region.
An electronic apparatus, comprising:
- a signal processing circuit;
- and
- a light detecting device, including:
- first, second, and third photoelectric conversion regions disposed in a substrate, wherein the second photoelectric conversion region is disposed adjacent to the first photoelectric conversion region the third photoelectric conversion region, and wherein the first, second, and third photoelectric conversion regions are disposed along a first direction;
- a first on-chip lens disposed above the first and second photoelectric conversion regions;
- a second on-chip lens disposed above the third photoelectric conversion region;
- a light shield, wherein at least a part of the light shield is disposed between the first photoelectric conversion region and the second photoelectric conversion region.
Dependencies are inferred from the claim text.