Vertical non-volatile memory devices and methods of programming the same

A vertical non-volatile memory device, comprising:

• a channel on a substrate, the channel extending in a first direction perpendicular to an upper surface of the substrate and having a cup-like shape in a vertical cross-sectional view;
• a first charge storage structure on an outer sidewall of the channel;
• first gate electrodes spaced apart from each other in the first direction on the substrate, each of the first gate electrodes surrounding the first charge storage structure;
• a second gate electrode in an inner space formed by the channel;
• and
• a conductive pad having a ring shape, the conductive pad contacting an upper surface of the channel and not contacting an upper surface of the second gate electrode, wherein:
• the channel has a ring shape in a plan view, the ring shape of the channel encircling the inner space formed by the channel, and
• the second gate electrode is disposed inside the ring shape of the channel and is completely encircled by the channel in the plan view.

A vertical non-volatile memory device, comprising:

• a channel on a substrate, the channel extending in a first direction perpendicular to an upper surface of the substrate;
• a first charge storage structure on an outer sidewall of the channel;
• a second charge storage structure on an inner sidewall of the channel;
• first gate electrodes spaced apart from each other in the first direction on the substrate, each of the first gate electrodes surrounding the first charge storage structure;
• a second gate electrode on an inner sidewall of the second charge storage structure;
• a conductive pad on an upper surface of the channel;
• a first contact plug on the conductive pad;
• a first bit line on the first contact plug;
• a second contact plug on an upper surface of the second gate electrode;
• and
• a second bit line on the second gate electrode, wherein:
• the channel has a ring shape in a plan view, and
• the second gate electrode is disposed inside the ring shape of the channel and is completely encircled by the channel in the plan view.