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US 11,444,096 B2Granted
Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJin Ha Kim
Life of this patent
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Abstract
A semiconductor device includes a cell array including a source structure, a peripheral circuit, an interconnection structure located between the cell array and the peripheral circuit and electrically coupled to the peripheral circuit, and a decoupling structure configured to prevent a coupling capacitor that occurs between the cell array and the interconnection structure.
Claims18
A semiconductor device, comprising:
- a cell array including a source structure;
- a peripheral circuit;
- an interconnection structure located between the cell array and the peripheral circuit and electrically coupled to the peripheral circuit;
- and
- a decoupling structure located between the cell array and the interconnection structure and having an electrically floating state.
2 more elements
A semiconductor device, comprising:
- a source structure including a first surface and a second surface, the second surface being on an opposite side of the first surface;
- a cell stacked structure that is located on the first surface of the source structure;
- a first interconnection structure that is located on the second surface of the source structure;
- and
- a decoupling structure located between the source structure and the first interconnection structure and having a mesh shape.
2 more elements
Dependencies are inferred from the claim text.