Semiconductor memory device and method of manufacturing the same

A semiconductor memory device comprising:

• a first semiconductor layer;
• a cell stack and a peripheral stack each disposed on the first semiconductor layer;
• a slit structure penetrating the cell stack;
• and
• a support structure penetrating the peripheral stack,
• wherein the peripheral stack includes a first portion surrounded by the support structure and a second portion spaced apart from the first portion by the support structure,
• wherein the first portion includes first insulating patterns arranged in a vertical direction and an insulating film filling one or more spaces, each of the spaces being between an adjacent pair of the first insulating patterns,
• wherein the second portion includes alternately stacked second insulating patterns and sacrificial patterns, and
• wherein the slit structure includes a portion penetrating the first portion of the peripheral stack.

A semiconductor memory device comprising:

• a first semiconductor layer;
• a cell stack and a peripheral stack each disposed on the first semiconductor layer;
• a penetration structure penetrating the peripheral stack;
• a slit structure spaced apart from the penetration structure;
• and
• a support structure penetrating the peripheral stack,
• wherein the peripheral stack includes a first portion in the support structure and a second portion connecting the first portion and the cell stack,
• wherein the penetration structure penetrates the first portion, and
• wherein the slit structure penetrates the first and second portions of the peripheral stack and the cell stack.