Back to results
US 11,444,090 B2Granted
Semiconductor device having a programming element
AssigneeSemiconductor Components Industries, LLC
InventorsJaume Roig-Guitart, Aurore Constant
Life of this patent
Estimating the term…
Abstract
An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses. In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.
Claims20
A GaN programming element comprising:
- an AlGaN layer overlying a semiconductor substrate;
- a first P-type GaN material on a first portion of the AlGaN layer, the first P-type GaN material having sides that have a first thickness and having a recess formed in the first P-type GaN material, the recess positioned between the sides, the first P-type GaN material that is underlying the recess having a second thickness that is less than the first thickness wherein a portion of the first P-type GaN material forms an anode of a GaN diode;
- a first conductor physically contacting the first P-type GaN material that is underlying the recess;
- and
- a second P-type GaN material overlying a second portion of the AlGaN layer wherein the second P-type GaN material forms at least a portion of a gate of an eHEMT, the second P-type GaN material spaced a first distance from the first P-type GaN material wherein a third portion of the AlGaN layer positioned between the anode and the gate forms a drain of the eHEMT.
2 more elements
A programming element comprising:
- a first semiconductor layer of a group III or group V semiconductor material wherein the first semiconductor layer forms a 2DEG with an underlying second semiconductor layer;
- a first P-type GaN layer on a first portion of the first semiconductor layer, the first P-type GaN layer having a plurality of recesses in a first portion of the first P-type GaN layer;
- a first conductor on the first P-type GaN layer including within the plurality of recesses;
- a second P-type GaN layer on a second portion of the first semiconductor layer, the second P-type GaN layer spaced laterally apart from the first P-type GaN layer;
- and
- a third portion of the first semiconductor layer disposed between the first P-type GaN layer and the second P-type GaN layer and extending from the first portion of the first semiconductor layer toward the second portion of the first semiconductor layer wherein the third portion of the first semiconductor layer forms both a portion of a drain of an eHEMT and a current flow path from the drain to the first P-type GaN layer.
3 more elements
A programming element comprising:
- a semiconductor substrate;
- a first semiconductor layer of a group III or group V semiconductor material;
- a second semiconductor layer underlying the first semiconductor layer wherein the first semiconductor layer and the second semiconductor layer form a 2DEG;
- a first gate material overlying a first portion of the first semiconductor layer, the first gate material having one or more recesses in a first portion of the first gate material;
- a first conductor on the first portion of the first gate material including on the one or more recesses;
- a second gate material overlying a second portion of the first semiconductor layer wherein the second gate material is spaced laterally apart from the first gate material;
- and
- a third portion of the first semiconductor layer extending from first portion of the first semiconductor layer to form a current path from the first conductor to the second portion of the first semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.