Semiconductor apparatus having stacked gates and method of manufacture thereof

A method for forming a semiconductor apparatus, the method comprising:

• forming a first field-effect transistor (FET) that comprises a first channel and a first gate disposed all around the first channel on a substrate of the semiconductor apparatus, the first channel configured to have a first current flow path parallel to a main surface of the substrate;
• forming a second FET that is stacked on the first FET along a direction substantially perpendicular to the main surface of the substrate and comprises a second channel and a second gate disposed all around the second channel, the second channel configured to have a second current flow path parallel to the main surface of the substrate, the first channel and the second channel separated and conductively isolated from each other;
• forming a first routing track and a second routing track that is electrically isolated from the first routing track, each of the first and second routing tracks being provided on a routing plane stacked on the second FET along the direction;
• forming a first conductive trace configured to conductively couple the first gate of the first FET to the first routing track;
• and
• forming a second conductive trace configured to conductively couple the second gate of the second FET to the second routing track.