Isolation structure for IC with epi regions sharing the same tank
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Akram A. Salman, Binghua Hu
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) includes a semiconductor substrate in which a plurality of spaced-apart deep trench (DT) structures are formed. The IC further includes a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures. Each of the DEEPN diffusion regions merges with at least one neighboring DEEPN diffusion region that surrounds at least one neighboring DT structure. The merged DEEPN diffusion regions may partially isolate two electronic devices, e.g. ESD devices.
Claims19
An integrated circuit, comprising:
- a p-type semiconductor substrate;
- a plurality of spaced-apart deep trench (DT) structures;
- a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures and merging with at least one neighboring DEEPN diffusion region surrounding at least one neighboring DT structure;
- and
- an n-type buried layer (NBL) within the semiconductor substrate, wherein each DEEPN diffusion region extends from a surface of the semiconductor substrate through a p-type semiconductor layer to the NBL.
An integrated circuit, comprising:
- a p-type semiconductor substrate;
- a plurality of spaced-apart deep trench (DT) structures;
- a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures and merging with at least one neighboring DEEPN diffusion region surrounding at least one neighboring DT structure;
- and
- an n-type buried layer (NBL) within the semiconductor substrate, wherein each DT structure extends from a surface of the semiconductor substrate through the NBL.
An integrated circuit, comprising:
- a p-type semiconductor substrate;
- a plurality of spaced-apart deep trench (DT) structures;
- a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures and merging with at least one neighboring DEEPN diffusion region surrounding at least one neighboring DT structure;
- and
- a DT ring surrounding an enclosed area of the semiconductor substrate, wherein the plurality of DEEPN diffusion regions form a continuous DEEPN region connecting to first and second locations on the DT ring.
Dependencies are inferred from the claim text.