Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same

A light emitting device comprising:

• a backplane;
• an array of light emitting diodes attached to a frontside of the backplane;
• a positive tone, imageable dielectric material layer located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, wherein sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile;
• and
• at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes, wherein:
• the positive tone, imageable dielectric material layer comprises a positive photoresist layer;
• and
• the positive photoresist layer comprises tapered encirclement portions that laterally encircle and contact a respective one of the light emitting diodes and include a respective set of inner sidewalls and a respective set of outer sidewalls, wherein a lateral spacing between each of the inner sidewalls and a most proximal one of the outer sidewalls decreases to zero with an increase in a vertical distance from the backplane.

A light emitting device comprising:

• a backplane;
• an array of light emitting diodes attached to a frontside of the backplane;
• a positive tone, imageable dielectric material layer located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, wherein sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile;
• and
• at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes,
• wherein:
• the at least one common conductive layer comprises a conductive adhesion layer contacting upper portions of sidewalls of the light emitting diodes and a top surface of the positive tone, imageable dielectric material layer, and a transparent conductive layer contacting a frontside surface of the conductive adhesion layer;
• and
• a subset of the light emitting diodes comprise a respective n-doped compound semiconductor substrate layer having a horizontal cross-sectional area that strictly increases with a distance from the frontside of the backplane.

A light emitting device comprising:

• a backplane;
• an array of light emitting diodes attached to a frontside of the backplane;
• a positive tone, imageable dielectric material layer located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, wherein sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile;
• and
• at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes,
• wherein:
• the at least one common conductive layer comprises a conductive adhesion layer contacting upper portions of sidewalls of the light emitting diodes and a top surface of the positive tone, imageable dielectric material layer, and a transparent conductive layer contacting a frontside surface of the conductive adhesion layer;
• the conductive adhesion layer comprises an array of openings, wherein each light emitting diode among the array of light emitting diodes extends through a respective opening within the array of openings;
• and
• the conductive adhesion layer does not contact any top surface of the light emitting diode.