Manufacturing method of semiconductor apparatus and semiconductor apparatus

A manufacturing method of a semiconductor apparatus, the method comprising:

• preparing an intermediate member that includes:
• a first member including a first substrate composed of a compound semiconductor and comprising a semiconductor element formed thereon;
• a second member including a second substrate composed of silicon and including a part of a circuit electrically connected to the semiconductor element;
• and
• a third member including a third substrate having a linear expansion coefficient in a range from 3×10−6/K to 6.5×10−6/K inclusive, wherein the second member is interposed between the first member and the third member;
• and
• heating the intermediate member to bond the first member and the second member together.

A semiconductor apparatus comprising:

• a first member including a first substrate composed of a compound semiconductor and comprising a semiconductor element formed thereon;
• a second member bonded to the first member and including a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and being composed of silicon;
• and
• a third member bonded to the second member, and including a third substrate having a linear expansion coefficient in a range from 3×10−6/K to 6.5×10−6/K inclusive, the first member, the second member, and the third member being stacked in sequence.

A semiconductor apparatus comprising:

• a first member including a first substrate composed of a compound semiconductor and comprising a semiconductor element formed thereon;
• a second member bonded to the first member, the second member including a second substrate composed of silicon and comprising a part of a circuit electrically connected to the semiconductor element, wherein the first member and the second member are stacked with each other;
• a first bonding electrode and a first insulation film formed on a side proximal to the second member;
• and
• a second bonding electrode and a second insulation film formed on a side proximal to first member side,
• wherein the first bonding electrode and the second bonding electrode are bonded together, and the first insulation film and the second insulation film are bonded together.