Fully molded semiconductor structure with face mounted passives and method of making the same

A semiconductor device, comprising:

• a plurality of conductive studs formed over an active surface of a semiconductor die, the plurality of conductive studs being disposed around a device mount site, wherein the device mount site comprises conductive interconnects comprising a height less than a height of the plurality of conductive studs;
• encapsulant disposed around the semiconductor die and the conductive studs, wherein a portion of the conductive studs is exposed from the encapsulant at a planar surface;
• a build-up interconnect structure comprising one or more layers disposed over and coupled to the planar surface, the conductive studs, and the conductive interconnects;
• and
• a device within a cavity coupled to the conductive interconnects of the device mount site.

A semiconductor device, comprising:

• a plurality of conductive studs formed over an active surface of a semiconductor die, the plurality of conductive studs being disposed around a device mount site, wherein the device mount site comprises conductive interconnects comprising a height less than a height of the plurality of conductive studs;
• encapsulant disposed around the semiconductor die and the conductive studs, wherein a portion of the conductive studs is exposed from the encapsulant;
• a build-up interconnect structure comprising one or more conductive layers disposed over and coupled to the conductive studs;
• electrical interconnects coupled to the build-up interconnect structure;
• and
• a device coupled to the conductive interconnects of the device mount site within a cavity.