RF devices with enhanced performance and methods of forming the same

An apparatus comprising:

• a mold device die comprising a device region, a passivation layer, a thermally conductive film, and a first mold compound, wherein:
• the device region includes a front-end-of-line (FEOL) portion and a back-end-of-line (BEOL) portion underneath the FEOL portion, wherein the FEOL portion comprises an active layer and isolation sections, which surround the active layer and extend vertically beyond a top surface of the active layer to define an opening within the isolation sections and over the active layer;
• the passivation layer extends over an entire backside of the device region, such that the passivation layer continuously resides over exposed surfaces within the opening and top surfaces of the isolation sections;
• the thermally conductive film resides over the passivation layer, wherein the thermally conductive film has a thermal conductivity greater than 10 w/m·k and an electrical resistivity greater than 1E5 Ohm-cm;
• and
• the first mold compound resides over the thermally conductive film, wherein a silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first mold compound and the active layer;
• and
• a multilayer redistribution structure formed underneath the BEOL portion of the mold device die, wherein the multilayer redistribution structure comprises a plurality of bump structures, which are on a bottom surface of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.

An apparatus comprising:

• a mold device die comprising a device region, a passivation layer, a thermally conductive film, and a first mold compound, wherein:
• the device region includes a front-end-of-line (FEOL) portion and a back-end-of-line (BEOL) portion underneath the FEOL portion, wherein the FEOL portion comprises an active layer and isolation sections, which surround the active layer and extend vertically beyond a top surface of the active layer to define an opening within the isolation sections and over the active layer;
• the passivation layer extends over an entire backside of the device region, such that the passivation layer continuously resides over exposed surfaces within the opening and top surfaces of the isolation sections;
• the thermally conductive film resides over the passivation layer, wherein the thermally conductive film has a thermal conductivity greater than 10 W/m·K and an electrical resistivity greater than 1E5 Ohm-cm;
• and
• the first mold compound resides over the thermally conductive film, wherein a silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first mold compound and the active layer;
• a multilayer redistribution structure formed underneath the BEOL portion of the mold device die, wherein:
• the multilayer redistribution structure extends horizontally beyond the mold device die;
• and
• the multilayer redistribution structure comprises a plurality of bump structures, which are on a bottom surface of the multilayer redistribution structure, and electrically coupled to the FEOL portion of the mold device die;
• and
• a second mold compound residing over the multilayer redistribution structure to encapsulate the mold device die.