Method for manufacturing a microelectronic device integrating a physical unclonable function provided by resistive memories, and said device

A method for manufacturing a microelectronic device comprising a plurality of resistive memories, a first part of these resistive memories being configured to form an unclonable physical function, better known as the acronym PUF, the resistive memories of said first part of resistive memories being said PUF memories, a second part of resistive memories being to provide a memory function to the microelectronic device, the resistive memories of the second part being called storage memories, the manufacturing method comprising the following steps of:

• providing a support comprising a plurality of first metal electrodes,
• for each first electrode, forming a dielectric layer portion comprising a first contact surface facing the corresponding first electrode and a second surface opposite to the first contact surface, the dielectric layer portions for forming the PUF memories having, on at least one of the first contact surface and the second surface, a surface roughness greater than that of the same surface of the dielectric layer portions for forming the storage memories,
• for each dielectric layer portion, forming a second electrode facing the second surface, said second surface then being a second contact surface facing the second electrode and the dielectric layer portion being interposed between the first and second electrodes, the resistive memories being thus formed.