Forming large chips through stitching
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Weiming Chris Chen
Life of this patent
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Weiming Chris Chen
Estimating the term…
A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.
A method comprising:
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.