Semiconductor device and method of forming the same

A method of forming a semiconductor device, the method comprising:

• providing a first dielectric layer having a first region and a second region laterally adjacent to the first region;
• forming a bottom electrode at least partially within the first region of the first dielectric layer;
• forming a memory element over the bottom electrode;
• forming a top electrode over the memory element;
• forming a second dielectric layer over at least the first region of the first dielectric layer, the second dielectric layer surrounding the memory element and surrounding at least a part of the top electrode;
• forming a third dielectric layer over the second region of the first dielectric layer and laterally adjacent to the second dielectric layer, wherein the third dielectric layer is in physical contact with a top surface of the first dielectric layer;
• forming a conductive interconnect in the third dielectric layer and the second region of the first dielectric layer;
• and
• forming a metal layer covering the top electrode, the second dielectric layer, the third dielectric layer, and the conductive interconnect,
• wherein the second dielectric layer is in physical contact with a side surface of the memory element and a side surface of the top electrode, and wherein the second dielectric layer is in physical contact with an entire side surface of the third dielectric layer;
• and
• wherein the metal layer extends across the first region and the second region and is in physical contact with the top electrode, the second dielectric layer, the third dielectric laver, and the conductive interconnect.