Semiconductor device including recessed interconnect structure

A semiconductor device, comprising:

• a first gate structure;
• a first interconnect structure disposed in an interconnect layer above the first gate structure;
• a second interconnect structure also disposed in the same interconnect layer, wherein the second interconnect structure is laterally spaced apart from the first interconnect structure;
• and
• a third interconnect structure electrically connecting the first gate structure to the first interconnect structure;
• wherein the third interconnect structure comprises a first portion and a second portion;
• wherein the first portion is in physical contact only with the first gate structure and the second portion is in physical contact only with the first interconnect structure.

A semiconductor device, comprising:

• a standard cell corresponding to an integrated circuit and comprising a plurality of gate structures extending along a first lateral direction, wherein a number of the gate structures is equal to or less than 5;
• wherein at least a first one and a second one of the gate structures, disposed next to each other, are electrically connected to a first interconnect structure and a second interconnect structure, respectively;
• wherein the first gate structure is electrically connected to the first interconnect structure through a first via structure;
• and
• wherein the second gate structure is electrically connected to the second interconnect structure through a combination of a second via structure and a source/drain interconnect structure, thereby allowing the second interconnect structure to laterally shift away from the second gate structure.