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US 11,444,013 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsBora Baloglu, Ron Huemoeller, Curtis Zwenger
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Abstract
An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.
Claims20
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor wafer having an active side, an inactive side opposite the active side, and lateral sides between the active and inactive sides, wherein the active side comprises a passivation layer on a semiconductor material, and a first bond pad exposed from the passivation layer;
- forming a first metal post on the first bond pad, the first metal post having a wafer post side, a distal post side, and a lateral post side between the wafer and distal post sides;
- forming a dielectric layer (DL) surrounding the first metal post, the DL having a wafer DL side coupled to the active side, a distal DL side, and a lateral DL side between the wafer DL side and the distal DL side, wherein the first metal post coupled the first bond pad extends vertically through the dielectric layer from the first bond pad to the distal DL side, and the distal post side of the first metal post is coplanar with the distal DL side;
- mounting a semiconductor die to a carrier via an adhesive layer, the semiconductor die comprising singulated portions of the semiconductor material, of the passivation layer, of the dielectric layer, the first bond pad, and the first metal post;
- encapsulating the semiconductor die mounted to the carrier with encapsulating material, the encapsulating material contacting and surrounding lateral sides of the semiconductor material and the lateral DL sides to form a reconstituted substrate in a wafer or panel format, the encapsulating material comprising a first encapsulant side, a second encapsulant side, and lateral encapsulant sides between the first and second encapsulant sides;
- releasing the carrier and the adhesive layer from the reconstituted substrate;
- forming a fan-out redistribution (RD) structure on the reconstituted substrate;
- and
- singulating the semiconductor device from the reconstituted substrate.
6 more elements
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor die comprising:
- a semiconductor material having an active side, an inactive side, and lateral sides between the active and inactive sides, wherein the active side comprises a first bond pad and a die passivation layer having an aperture exposing the first bond pad;
- a dielectric layer (DL) having a proximal DL side coupled to the active side, a distal DL side, and lateral DL sides between the proximal and distal DL sides;
- and
- a first metal post coupled to the first bond pad, the first metal post having a proximal post side, a distal post side, and a lateral post side between the proximal and distal post sides, the metal post extending vertically through the dielectric layer from the bond pad to the distal DL side, the distal post side of the metal post coplanar with the distal DL side, a height of the first metal post greater than a maximum width of the first metal post;
- encapsulating the semiconductor die in an encapsulating material, the encapsulating material contacting and surrounding the lateral sides of the semiconductor material and the lateral DL sides, the encapsulating material comprising a first encapsulant side, a second encapsulant side, and lateral encapsulant sides between the first and second encapsulant sides;
- and
- forming a fan-out redistribution (RD) structure on the semiconductor die and the first encapsulant side.
5 more elements
Dependencies are inferred from the claim text.