Semiconductor device

A semiconductor device comprising:

• a first semiconductor chip including a first field effect transistor for switching;
• a first chip mounting portion on which the first semiconductor chip is mounted via a first bonding material;
• a first lead electrically connected to a first pad for source of the first semiconductor chip through a first metal plate;
• a first metal portion formed integrally with the first lead;
• and
• a sealing body in which the first semiconductor chip, the first metal plate, the first metal portion, at least a part of the first chip mounting portion, and a part of the first lead are sealed,
• wherein a first back surface electrode for drain of the first semiconductor chip and the first chip mounting portion are bonded via the first bonding material,
• the first metal plate and the first pad for source of the first semiconductor chip are bonded via a second bonding material,
• the first metal plate and the first metal portion are bonded via a third bonding material,
• the first bonding material, the second bonding material, and the third bonding material have conductivity,
• each of the first bonding material, the second bonding material, and the third bonding material is a silver paste ponding material, and
• a silver content of each of the first bonding material and the second bonding material is lower than that of the third bonding material.

A semiconductor device comprising:

• a first semiconductor chip including a first field effect transistor for switching;
• a first chip mounting portion on which the first semiconductor chip is mounted via a first bonding material;
• a first lead electrically connected to a first pad for source of the first semiconductor chip through a first metal plate;
• a first metal portion formed integrally with the first lead;
• and
• a sealing body in which the first semiconductor chip, the first metal plate, the first metal portion, at least a part of the first chip mounting portion, and a part of the first lead are sealed,
• wherein a first back surface electrode for drain of the first semiconductor chip and the first chip mounting portion are bonded via the first bonding material,
• the first metal plate and the first pad for source of the first semiconductor chip are bonded via a second bonding material,
• the first metal plate and the first metal portion are bonded via a third bonding material, the first bonding material, the second bonding material, and the third bonding material have conductivity,
• an elastic modulus of the first bonding material is lower than that of each of the second bonding material and the third bonding material, and
• a bonding area between the first metal plate and the first pad for source of the first semiconductor chip via the second bonding material is smaller than that between the first chip mounting portion and the first back surface electrode for drain of the first semiconductor chip via the first bonding material.