Semiconductor device

A semiconductor device comprising:

• a first transistor that includes an electron transit layer made of a nitride semiconductor, a first gate electrode, a first source electrode, and a first drain electrode;
• a second transistor that includes an electron transit layer made of a nitride semiconductor, a second gate electrode, a second source electrode, and a second drain electrode;
• a sealing resin that covers the first transistor and the second transistor,
• first and second terminal at least partially exposed from the sealing resin, wherein
• the first gate electrode and the second drain electrode are directly connected to each other, and
• the first source electrode and the second source electrode are respectively directly connected to the first and second terminals;
• a first lead that is directly connected to the first source electrode and includes a first obverse surface and a first reverse surface that face mutually opposite sides in a thickness direction, wherein
• the sealing resin covers at least a portion of the first lead, and
• the first reverse surface is exposed from the sealing resin
• a second lead that is directly connected to the first drain electrode and is partially exposed from the sealing resin;
• a third lead that is directly connected to the first gate electrode and is partially exposed from the sealing resin;
• a fourth lead that is directly connected to the second gate electrode and is partially exposed from the sealing resin;
• and
• a fifth lead that is directly connected to the second source electrode and is partially exposed from the sealing resin.