Semiconductor device, imaging device, and manufacturing apparatus

An imaging device, comprising:

• a semiconductor substrate;
• a plurality of pixels, wherein
• each of the plurality of pixels includes a photoelectric conversion unit that extends in a depth direction of the semiconductor substrate, and
• the photoelectric conversion unit of each of the plurality of pixels is configured to perform photoelectric conversion;
• and
• an inter-pixel light shielding unit between the photoelectric conversion unit of a first pixel of the plurality of pixels and a second pixel of the plurality of pixels, wherein
• the second pixel is adjacent to the first pixel, and
• the inter-pixel light shielding unit includes:
• a light shielding member at a center of the inter-pixel light shielding unit;
• a barrier metal film around the light shielding member,
• wherein a material of the barrier metal film includes one of tantalum (Ta), titanium (Ti), tungsten (W), or zirconium (Zr);
• a space between the barrier metal film and the semiconductor substrate;
• and
• an insulating film between the semiconductor substrate and the space,
• wherein the insulating film is in contact with the semiconductor substrate.

A manufacturing apparatus to manufacture a semiconductor device, the semiconductor device including:

• a through hole that penetrates a semiconductor substrate;
• an electrode in the through hole, wherein
• the electrode is around a part of the semiconductor substrate, and
• the part of the semiconductor substrate is at a center of the through hole;
• a barrier metal film around the electrode,
• wherein a material of the barrier metal film includes one of tantalum (Ta), titanium (Ti), tungsten (W), or zirconium (Zr);
• a space around the barrier metal film;
• and
• an insulating film between the semiconductor substrate and the space,
• wherein the insulating film is in contact with the semiconductor substrate.