Thermoelectric semiconductor device and method of making same
AssigneeWestern Digital Technologies, Inc.
InventorsJiandi Du, Yazhou Zhang, Binbin Zheng, Sundarraj Chandran, Wenbin Qu, Chin-Tien Chiu
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Abstract
A thermoelectric semiconductor device includes a heat dissipating semiconductor module and a stack of flash memory dies mounted on a substrate. The heat dissipating module comprises a first semiconductor die such as a controller, and a second semiconductor die such as a thermoelectric semiconductor die to cool the first semiconductor die during operation. The thermoelectric semiconductor die may be mounted to the controller die at the wafer level.
Claims20
A method of forming heat dissipating semiconductor modules, comprising the steps of:
- forming a first group of semiconductor dies on a first wafer by the step of forming integrated circuits and metallization layers in a first major surface of the first wafer in areas defining the first group of semiconductor dies;
- forming a second group of semiconductor dies on a second wafer, the second group of semiconductor dies being thermoelectric semiconductor dies, by the step of doping p-n regions at least in areas of the second wafer defining the second group of semiconductor dies such that a temperature gradient or voltage potential between first and second surfaces of a semiconductor die of the second group of semiconductor dies results in migration of charge carriers between the first and second surfaces of the semiconductor die;
- and
- the first and second groups of semiconductor dies on the first and second wafers formed such that the first group of semiconductor dies align with the second group of semiconductor dies upon joining of the first and second semiconductor wafers to form the heat dissipating semiconductor modules.
A method of forming a thermoelectric semiconductor device, comprising the steps of:
- receiving a first wafer including a group of first semiconductor dies, the first semiconductor dies comprising integrated circuits having metallization layers in a first major surface of the first wafer in areas defining the first group of semiconductor dies;
- receiving a second wafer including a group of second semiconductor dies, the second semiconductor dies comprising thermoelectric semiconductor dies formed by doping p-n regions at least in areas of the second wafer defining the second semiconductor dies such that a temperature gradient or voltage potential between first and second surfaces of a second semiconductor die results in migration of charge carriers between the first and second surfaces thereof;
- and
- joining the first and second semiconductor wafers, the first and second semiconductor dies on the first and second wafers being aligned, to form heat dissipating semiconductor modules.
A method of forming a thermoelectric semiconductor device, comprising the steps of:
- attaching a heat dissipating semiconductor module to a substrate, the heat dissipating semiconductor module formed by affixing a first wafer comprising controller dies to a second wafer comprising thermoelectric semiconductor dies and dicing the first and second wafer assembly such that the controller dies attach to the thermoelectric semiconductor dies to form a plurality of heat dissipating semiconductor modules including the heat dissipating semiconductor module, wherein the thermoelectric semiconductor die is doped with p-n regions such that a temperature gradient or voltage potential between first and second surfaces of the thermoelectric semiconductor die results in cooling of the controller die;
- attaching one or more flash memory dies to the substrate adjacent to the heat dissipating semiconductor module;
- electrically coupling the heat dissipating semiconductor module to the substrate;
- and
- electrically coupling the one or more flash memory dies to the substrate, wherein the substrate facilitates electrical communication between the controller die and the one or more flash memory dies.
Dependencies are inferred from the claim text.