Semiconductor device and a method for fabricating the same

A semiconductor device comprising:

• a gate structure including:
• a gate electrode,
• a cap insulating layer disposed over the gate electrode,
• first sidewall spacers disposed on opposing side faces of the gate electrode and on opposing side faces of the cap insulating layer, and
• second sidewall spacers disposed on the first sidewall spacers;
• a source/drain epitaxial layer adjacent to the gate structure;
• a source/drain contact contacting the source/drain epitaxial layer;
• and
• a source/drain cap layer disposed on the source/drain contact, wherein:
• the first sidewall spacers include lower portions and upper portions having different material than the lower portions, wherein:
• the first sidewall spacers include lower portions and upper portions having different material than the lower portions,
• the upper portions of the first sidewall spacers are connected by a connection part,
• outermost side surfaces of the connection part and the second sidewall spacers are aligned;
• and
• a lowermost portion of the upper portions is located at a height above a lowermost portion of the cap insulating layer.

A semiconductor device comprising:

• a gate structure including:
• a gate electrode,
• a cap insulating layer disposed over the gate electrode,
• first sidewall spacers disposed on opposing side faces of the gate electrode and on opposing side faces of the cap insulating layer, and
• second sidewall spacers disposed on the first sidewall spacers;
• a source/drain epitaxial layer adjacent to the gate structure;
• a protective layer formed in contact with the cap insulating layer, the first sidewall spacers and the second sidewall spacers, wherein outermost side surfaces of the protective layer and the second sidewall spacers are aligned;
• and
• a gate contact contacting the gate electrode passing through the protective layer,
• wherein a height of the first sidewall spacers is smaller than a height of the second sidewall spacers, and
• an uppermost portion of the first sidewall spacers is located at a same height as a lowermost portion of the protective layer.