Trench isolation process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Lei Chen, Cheng-Hsin Chen, Chung Chieh Ting, Che-Yi Lin, Clark Lee
Life of this patent
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Abstract
One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench.
Claims20
A method of providing trench isolation, comprising:
- forming a deep trench within a silicon wafer;
- depositing a first insulating material within the deep trench;
- annealing, after depositing the first insulating material within the deep trench, the silicon wafer;
- forming, after annealing the silicon wafer, a shallow trench having a lower surface that is above a lower surface of the deep trench;
- and
- depositing a second insulating material within the shallow trench,
- wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material.
A method of providing trench isolation, comprising:
- forming a deep trench having a first depth from an upper surface of a silicon wafer;
- depositing a first insulating material within the deep trench;
- annealing, after depositing the first insulating material within the deep trench, the silicon wafer;
- forming a shallow trench having a second depth from the upper surface of the silicon wafer,
- wherein the second depth is less than the first depth;
- depositing a second insulating material within the shallow trench,
- wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material;
- and
- performing a single chemical-mechanical polishing process for the deep trench and the shallow trench.
A device comprising:
- an active area;
- a deep trench that comprises a first insulating material;
- and
- a shallow trench, recessed from the active area and having a lower surface that is above a lower surface of the deep trench, comprising:
- a second insulating material, and
- an oxide layer on an upper surface of the second insulating material,
- wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material.
Dependencies are inferred from the claim text.