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US 11,443,948 B2Granted
Doping techniques
AssigneeApplied Materials, Inc.
InventorsWolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
Life of this patent
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Abstract
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Claims19
A method of forming an electronic device, the method comprising:
- selectively depositing a dopant film on a first surface comprising a semiconductor material relative to a second surface comprising an oxide material by a non-line of sight, thermal decomposition deposition process, the dopant film consisting essentially of a dopant and being substantially conformal;
- and
- annealing the electronic device to drive dopant atoms from the dopant film into the semiconductor material to a depth greater than or equal to about 1 nm to form a conformally doped semiconductor material with substantially no dopant atoms driven into the oxide material.
A method of forming an electronic device, the method comprising:
- exposing a substrate with a first surface comprising a semiconductor material and a second surface comprising an oxide material to a boron precursor at a temperature in a range of about 700° C. to about 800° C. to selectively deposit a conformal dopant film by a non-line-of-sight, thermal decomposition process, the conformal dopant film being deposited on the first surface over the second surface, the conformal dopant film consisting essentially of boron and having a thickness in a range of about 2 to about 10 monolayers;
- and
- annealing the electronic device with a millisecond anneal at a temperature in a range of about 1150° C. to about 1200° C. to drive boron atoms from the conformal dopant film into the semiconductor material to conformally dope the semiconductor material to a depth of at least 1 nm with substantially no dopant atoms driven into the oxide material.
Dependencies are inferred from the claim text.